Citation: |
Wang Chong, Zhang Jinfeng, Quan Si, Hao Yue, Zhang Jincheng, Ma Xiaohua. An Enhancement-Mode AlGaN/GaN HEMT with Recessed-Gate[J]. Journal of Semiconductors, 2008, 29(9): 1682-1685.
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Wang C, Zhang J F, Quan S, Hao Y, Zhang J C, Ma X H. An Enhancement-Mode AlGaN/GaN HEMT with Recessed-Gate[J]. J. Semicond., 2008, 29(9): 1682.
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An Enhancement-Mode AlGaN/GaN HEMT with Recessed-Gate
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Abstract
Fabrication of enhancement-mode high electron mobility transistors on AlGaN/GaN heterostructures grown on sapphire substrates is reported.These devices with 1.2μm gate-length,4mm space between source and drain,and 15nm recessed-gate depth exhibit a maximum drain current of 332mA/mm at 3V,a maximum transconductance of 221mS/mm,a threshold voltage of 0.57V, ft of 5.2GHz,and fmax of 9.3GHz.A dielectric layer formed unintentionally during recessed-gate etching is confirmed by contrasting the Schottky I-V characteristics of pre-etching and post-etching.The frequency characteristics and subthreshold characteristics of the devices are studied in detail. -
References
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