Chin. J. Semicond. > 1996, Volume 17 > Issue 11 > 822-829
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适用于大电流的SiGe基区HBT的电流和频率特性的解析模型

钱晓州，阮刚

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    Received: 18 August 2015 Revised: Online: Published: 01 November 1996

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      Article Navigation >  Journal of Semiconductors  > 1996  >  17(11): 822-829
      钱晓州，阮刚. 适用于大电流的SiGe基区HBT的电流和频率特性的解析模型[J]. 半导体学报(英文版), 1996, 17(11): 822-829.
      Citation:
      钱晓州，阮刚. 适用于大电流的SiGe基区HBT的电流和频率特性的解析模型[J]. 半导体学报(英文版), 1996, 17(11): 822-829.
      shu

      • Received Date: 2015-08-18

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