Chin. J. Semicond. > 1986, Volume 7 > Issue 3 > 298-307
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在多数载流子对边区作非饱和填充的条件下测量深中心分布的理论与实践

陈开茅 and 秦国刚

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    Received: 20 August 2015 Revised: Online: Published: 01 March 1986

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      Article Navigation >  Journal of Semiconductors  > 1986  >  7(3): 298-307
      陈开茅, 秦国刚. 在多数载流子对边区作非饱和填充的条件下测量深中心分布的理论与实践[J]. 半导体学报(英文版), 1986, 7(3): 298-307.
      Citation:
      陈开茅, 秦国刚. 在多数载流子对边区作非饱和填充的条件下测量深中心分布的理论与实践[J]. 半导体学报(英文版), 1986, 7(3): 298-307.
      shu

      • Received Date: 2015-08-20

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