Chin. J. Semicond. > 2000, Volume 21 > Issue 8 > 754-759
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软X射线发射光谱法研究过渡金属硅化物的价电子能带结构

王金良 and 王天民

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Key words: 软X射线发射光谱法, 锰硅化物, 价电子态密度, Si-L_(2,3)和Si-K_β价带发射谱

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    Received: 20 August 2015 Revised: Online: Published: 01 August 2000

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      Article Navigation >  Journal of Semiconductors  > 2000  >  21(8): 754-759
      王金良, 王天民. 软X射线发射光谱法研究过渡金属硅化物的价电子能带结构[J]. 半导体学报(英文版), 2000, 21(8): 754-759.
      Citation:
      王金良, 王天民. 软X射线发射光谱法研究过渡金属硅化物的价电子能带结构[J]. 半导体学报(英文版), 2000, 21(8): 754-759.
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      • Received Date: 2015-08-20

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