Chin. J. Semicond. > 1994, Volume 15 > Issue 2 > 139-144
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完全　MBE　生长的内含吸收型光栅　GaAlAs／GaAs　多量子阱增益耦合型分布反馈式半导体激光器

罗毅，司伟民，张盛忠，陈镝，王健华，蒲锐

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    Received: 18 August 2015 Revised: Online: Published: 01 February 1994

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      Article Navigation >  Journal of Semiconductors  > 1994  >  15(2): 139-144
      罗毅，司伟民，张盛忠，陈镝，王健华，蒲锐. 完全　MBE　生长的内含吸收型光栅　GaAlAs／GaAs　多量子阱增益耦合型分布反馈式半导体激光器[J]. 半导体学报(英文版), 1994, 15(2): 139-144.
      Citation:
      罗毅，司伟民，张盛忠，陈镝，王健华，蒲锐. 完全　MBE　生长的内含吸收型光栅　GaAlAs／GaAs　多量子阱增益耦合型分布反馈式半导体激光器[J]. 半导体学报(英文版), 1994, 15(2): 139-144.
      shu

      • Received Date: 2015-08-18

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