Chin. J. Semicond. > 2000, Volume 21 > Issue 11 > 1107-1110
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SiO_2膜增强InGaAsP超晶格外延片的量子阱混合

黄晓东 , 黄德修 and 刘雪峰

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Key words: 超晶格材料, 无杂质空位扩散, InGaAsP, 量子阱混合

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    Received: 20 August 2015 Revised: Online: Published: 01 November 2000

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      Article Navigation >  Journal of Semiconductors  > 2000  >  21(11): 1107-1110
      黄晓东, 黄德修, 刘雪峰. SiO_2膜增强InGaAsP超晶格外延片的量子阱混合[J]. 半导体学报(英文版), 2000, 21(11): 1107-1110.
      Citation:
      黄晓东, 黄德修, 刘雪峰. SiO_2膜增强InGaAsP超晶格外延片的量子阱混合[J]. 半导体学报(英文版), 2000, 21(11): 1107-1110.
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      • Received Date: 2015-08-20

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