| Citation: |
Zou Liner, Chen Baoxue, Du Liping, Liu Xiaoqing, Hamanaka H, Iso M. Effect of Annealing Temperature on Amorphous Semiconductor As2S8 Film Waveguide[J]. Journal of Semiconductors, 2007, 28(8): 1307-1311.
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Zou L E, Chen B X, Du L P, Liu X Q, Hamanaka H, Iso M. Effect of Annealing Temperature on Amorphous Semiconductor As2S8 Film Waveguide[J]. Chin. J. Semicond., 2007, 28(8): 1307.
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Effect of Annealing Temperature on Amorphous Semiconductor As2S8 Film Waveguide
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Abstract
Amorphous semiconductor As2S8 film is shown to undergo structural transformations under thermal machining.Increases in the refractive index and density are found through the application of a prism coupler and Raman spectra.The experimental results demonstrate that the no-full reversible photorefractive phenomenon in the as-deposited and well-illuminated As2S8 film until the annealing temperature reaches 160℃ is found,and depends on the annealing temperature.The full reversible photorefractive phenomenon is observed in annealed As2S8 film after annealing under the glass transition temperature of 130℃.An optical transmission experiment shows that the transmission loss of an amorphous semiconductor As2S8 film after annealing decreases by about 4dB/cm. -
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