Chin. J. Semicond. > 1987, Volume 8 > Issue 4 > 385-390
|

CONTENTS

P埋层GaAs MESFET研究

史常忻 , 李晓明 , 忻尚衡 and 陈益新

+ Author Affiliations

PDF

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2555 Times PDF downloads: 868 Times Cited by: 0 Times

    History

    Received: 19 August 2015 Revised: Online: Published: 01 April 1987

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 1987  >  8(4): 385-390
      史常忻, 李晓明, 忻尚衡, 陈益新. P埋层GaAs MESFET研究[J]. 半导体学报(英文版), 1987, 8(4): 385-390.
      Citation:
      史常忻, 李晓明, 忻尚衡, 陈益新. P埋层GaAs MESFET研究[J]. 半导体学报(英文版), 1987, 8(4): 385-390.
      shu

      • Received Date: 2015-08-19

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return