Chin. J. Semicond. > 1987, Volume 8 > Issue 4 > 385-390
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P埋层GaAs MESFET研究

史常忻 , 李晓明 , 忻尚衡 and 陈益新

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    Received: 19 August 2015 Revised: Online: Published: 01 April 1987

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      Article Navigation >  Journal of Semiconductors  > 1987  >  8(4): 385-390
      史常忻, 李晓明, 忻尚衡, 陈益新. P埋层GaAs MESFET研究[J]. 半导体学报(英文版), 1987, 8(4): 385-390.
      Citation:
      史常忻, 李晓明, 忻尚衡, 陈益新. P埋层GaAs MESFET研究[J]. 半导体学报(英文版), 1987, 8(4): 385-390.
      shu

      • Received Date: 2015-08-19

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