Chin. J. Semicond. > 2004, Volume 25 > Issue 11 > 1376-1380
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对GaN薄膜不同腐蚀方法的腐蚀坑的研究(英文)

陆敏 , 常昕 , 方慧智 , 杨志坚 , 杨华 , 黎子兰 , 任谦 , 张国义 and 章蓓

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Key words: 氮化镓, 腐蚀坑密度, 穿透位错

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    Received: 19 August 2015 Revised: Online: Published: 01 November 2004

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      Article Navigation >  Journal of Semiconductors  > 2004  >  25(11): 1376-1380
      陆敏, 常昕, 方慧智, 杨志坚, 杨华, 黎子兰, 任谦, 张国义, 章蓓. 对GaN薄膜不同腐蚀方法的腐蚀坑的研究(英文)[J]. 半导体学报(英文版), 2004, 25(11): 1376-1380.
      Citation:
      陆敏, 常昕, 方慧智, 杨志坚, 杨华, 黎子兰, 任谦, 张国义, 章蓓. 对GaN薄膜不同腐蚀方法的腐蚀坑的研究(英文)[J]. 半导体学报(英文版), 2004, 25(11): 1376-1380.
      shu

      • Received Date: 2015-08-19

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