Chin. J. Semicond. > 1995, Volume 16 > Issue 10 > 772-778
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多能MeV硼离子注入单晶硅形成特殊形状载流子分布

康一秀，赵渭江，王宇钢，张利春，虞福春

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    Received: 19 August 2015 Revised: Online: Published: 01 October 1995

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      Article Navigation >  Journal of Semiconductors  > 1995  >  16(10): 772-778
      康一秀，赵渭江，王宇钢，张利春，虞福春. 多能MeV硼离子注入单晶硅形成特殊形状载流子分布[J]. 半导体学报(英文版), 1995, 16(10): 772-778.
      Citation:
      康一秀，赵渭江，王宇钢，张利春，虞福春. 多能MeV硼离子注入单晶硅形成特殊形状载流子分布[J]. 半导体学报(英文版), 1995, 16(10): 772-778.
      shu

      • Received Date: 2015-08-19

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