Chin. J. Semicond. > 1983, Volume 4 > Issue 6 > 596-600
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在离子注入硅激光退火时引入缺陷

鲍希茂 , 黄信凡 , 郭禾 and 张梅

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    Received: 20 August 2015 Revised: Online: Published: 01 June 1983

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      Article Navigation >  Journal of Semiconductors  > 1983  >  4(6): 596-600
      鲍希茂, 黄信凡, 郭禾, 张梅. 在离子注入硅激光退火时引入缺陷[J]. 半导体学报(英文版), 1983, 4(6): 596-600.
      Citation:
      鲍希茂, 黄信凡, 郭禾, 张梅. 在离子注入硅激光退火时引入缺陷[J]. 半导体学报(英文版), 1983, 4(6): 596-600.
      shu

      • Received Date: 2015-08-20

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