Chin. J. Semicond. > 1985, Volume 6 > Issue 4 > 433-436
|

CONTENTS

半绝缘砷化镓材料的铍离子注入

周勉 and 史常忻

+ Author Affiliations

PDF

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2587 Times PDF downloads: 1119 Times Cited by: 0 Times

    History

    Received: 20 August 2015 Revised: Online: Published: 01 April 1985

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 1985  >  6(4): 433-436
      周勉, 史常忻. 半绝缘砷化镓材料的铍离子注入[J]. 半导体学报(英文版), 1985, 6(4): 433-436.
      Citation:
      周勉, 史常忻. 半绝缘砷化镓材料的铍离子注入[J]. 半导体学报(英文版), 1985, 6(4): 433-436.
      shu

      • Received Date: 2015-08-20

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return