Chin. J. Semicond. > 2002, Volume 23 > Issue 3 > 296-300
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复合栅控二极管新技术提取热载流子诱生的NMOS/SOI器件界面陷阱的横向分布

何进 , 张兴 , 黄如 and 王阳元

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Key words: SOI技术, MOS器件, 界面陷阱分布, 热载流子效应, 复合栅控二极管技术

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    Received: 19 August 2015 Revised: Online: Published: 01 March 2002

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      Article Navigation >  Journal of Semiconductors  > 2002  >  23(3): 296-300
      何进, 张兴, 黄如, 王阳元. 复合栅控二极管新技术提取热载流子诱生的NMOS/SOI器件界面陷阱的横向分布[J]. 半导体学报(英文版), 2002, 23(3): 296-300.
      Citation:
      何进, 张兴, 黄如, 王阳元. 复合栅控二极管新技术提取热载流子诱生的NMOS/SOI器件界面陷阱的横向分布[J]. 半导体学报(英文版), 2002, 23(3): 296-300.
      shu

      • Received Date: 2015-08-19

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