Chin. J. Semicond. > 1991, Volume 12 > Issue 11 > 705-708
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nμc-Si:H/SiO_x/Ag隧道背面接触对a-Si:H太阳能电池性能的影响

李海峰 , 熊华 , 刁宏伟 , 郑怀德 and 廖显伯

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    Received: 19 August 2015 Revised: Online: Published: 01 November 1991

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      Article Navigation >  Journal of Semiconductors  > 1991  >  12(11): 705-708
      李海峰, 熊华, 刁宏伟, 郑怀德, 廖显伯. nμc-Si:H/SiO_x/Ag隧道背面接触对a-Si:H太阳能电池性能的影响[J]. 半导体学报(英文版), 1991, 12(11): 705-708.
      Citation:
      李海峰, 熊华, 刁宏伟, 郑怀德, 廖显伯. nμc-Si:H/SiO_x/Ag隧道背面接触对a-Si:H太阳能电池性能的影响[J]. 半导体学报(英文版), 1991, 12(11): 705-708.
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      • Received Date: 2015-08-19

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