| Citation: |
Lin Yuanhua, Wang Jianfei, He Hongcai, Zhou Jianping, Zhou Xisong, Nan Cewen. Preparation of Dielectric Bi2Ti2O7 Thin Film by Pulsed Laser Deposition Method and Its Optical Absorption Properties[J]. Journal of Semiconductors, 2005, 26(S1): 74-77.
****
Lin Y H, Wang J F, He H C, Zhou J P, Zhou X S, Nan C W. Preparation of Dielectric Bi2Ti2O7 Thin Film by Pulsed Laser Deposition Method and Its Optical Absorption Properties[J]. Chin. J. Semicond., 2005, 26(13): 74.
|
Preparation of Dielectric Bi2Ti2O7 Thin Film by Pulsed Laser Deposition Method and Its Optical Absorption Properties
-
Abstract
Dielectric Bi2Ti2O7 thin films are synthesized by the pulsed laser deposition with the energy of single pulse ～350mJ,the pulse frequency ～5Hz,and suitable substrate temperature.The results indicate that the pure and homogeneous films can be obtained when the SiO2 substrate temperature was controlled in the range of 500～600℃.The dielectric constant is about 18.2 for the BIT-3 film sample,dielectric loss is about 0.015 and has good frequency stability.The dielectric film has good absorptivity in the range of 200～450nm wavelength,which can be attractive for technological applications for the MEMS devices. -
References
-
Proportional views
DownLoad: