Chin. J. Semicond. > 1990, Volume 11 > Issue 8 > 635-638
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N~+和N_2~+注入Si的力学和电学特性

马德录 , 毛晓峰 and 尚德颖

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    Received: 19 August 2015 Revised: Online: Published: 01 August 1990

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      Article Navigation >  Journal of Semiconductors  > 1990  >  11(8): 635-638
      马德录, 毛晓峰, 尚德颖. N~+和N_2~+注入Si的力学和电学特性[J]. 半导体学报(英文版), 1990, 11(8): 635-638.
      Citation:
      马德录, 毛晓峰, 尚德颖. N~+和N_2~+注入Si的力学和电学特性[J]. 半导体学报(英文版), 1990, 11(8): 635-638.
      shu

      • Received Date: 2015-08-19

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