| Citation: |
Liu Songmin, Gu Shulin, Zhu Shunming, Ye Jiandong, Liu Wei, Zhang Rong, Zheng Youdou. Simulation of the ZnO-MOCVD Horizontal Reactor Geometry[J]. Journal of Semiconductors, 2007, 28(S1): 309-311.
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Liu S M, Gu S L, Zhu S M, Ye J and o N, Liu W, Zhang R, Zheng Y D. Simulation of the ZnO-MOCVD Horizontal Reactor Geometry[J]. Chin. J. Semicond., 2007, 28(S1): 309.
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Simulation of the ZnO-MOCVD Horizontal Reactor Geometry
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Abstract
A three-dimensional model based on the computational fluid dynamics (CFD) is put forward to study the flow pat. terns in a homemade horizontal MoCVD reactor for ZnO growth.The governing equations are discretized by employing the control.volume.based finite difference method.By solving the conservation equations of the energy，momentum，mass and chemical species，and the effect of the various angles in the gas inlets on the ZnO growth distribution on the substrate is mainly investigated.In addition，the influence of the position of the substrate on the growth rate is also analyzed.Computa. tional results afford a powerful tool for the configuration optimization of the MoCVD reactor.-
Keywords:
- ZnO,
- MOCVD,
- numerical simulation
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References
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Proportional views
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