| Citation: |
Chang Zhongkun, Yu Ke, Zhang Yongsheng, Li Lijun, Ouyang Shixi, Zhang Qingjie, Wang Qingyan, Zhu Ziqiang. Patterned Growth and Field Emission Properties of ZnO Nanorods[J]. Journal of Semiconductors, 2006, 27(S1): 84-86.
****
Chang Z K, Yu K, Zhang Y S, Li L J, Ou Y S X, Zhang Q J, Wang Q Y, Zhu Z Q. Patterned Growth and Field Emission Properties of ZnO Nanorods[J]. Chin. J. Semicond., 2006, 27(13): 84.
|
Patterned Growth and Field Emission Properties of ZnO Nanorods
-
Abstract
Patterned ZnO nanorods have been first grown on patterned silicon nanocrystallite (SiNC) films that were fabricated on (100) orientation p-type boron-doped silicon wafer by hydrogen ion implantation technique and the anodic etching method,and their field emission properties were obtained.Field emission measurements demonstrated that the synthesized ZnO nanorods have excellent field emission properties,namely low turn-on field,low threshold field,and high emission spot density.The patterned ZnO nanorods have great potential in the application of flat panel displays.-
Keywords:
- ZnO nanorods,
- patterned growth,
- field emission
-
References
-
Proportional views
DownLoad: