Citation: |
Liu Lifeng, Chen Nuofu, Chai Chunlin, Yang Shaoyan, Liu Zhikai. Mn-Si Films Fabricated by Low Energy Ion Beam Deposition[J]. Journal of Semiconductors, 2005, 26(S1): 94-97.
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Liu L F, Chen N F, Chai C L, Yang S Y, Liu Z K. Mn-Si Films Fabricated by Low Energy Ion Beam Deposition[J]. Chin. J. Semicond., 2005, 26(13): 94.
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Mn-Si Films Fabricated by Low Energy Ion Beam Deposition
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Abstract
Manganese content gradually variational Mn-Si film is fabricated by low energy ion beam deposition method.The compositional properties of samples are studied by Auger electron spectroscopy.The structure and surface morphologies of samples are analyzed by X-ray diffraction and atomic force microscopy,respectively.Measurements show that manganese ions reach deeper in the sample grown at 300℃ than one grown at room temperature,the structure of which is amorphous.The structure of the sample grown at 300℃ is crystallized.There is no new phase except silicon in the sample grown at 300℃ and indicates that Mn-Si solid solution film is obtained.-
Keywords:
- low energy ion beam,
- silicon,
- manganese,
- X-ray diffraction
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References
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Proportional views