Chin. J. Semicond. > 1984, Volume 5 > Issue 1 > 95-98
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硅、锗单晶中Ⅳ族代位式杂质产生的局域模与红外吸收

叶亦英 , 陈畅生 and 张哲华

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    Received: 20 August 2015 Revised: Online: Published: 01 January 1984

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      Article Navigation >  Journal of Semiconductors  > 1984  >  5(1): 95-98
      叶亦英, 陈畅生, 张哲华. 硅、锗单晶中Ⅳ族代位式杂质产生的局域模与红外吸收[J]. 半导体学报(英文版), 1984, 5(1): 95-98.
      Citation:
      叶亦英, 陈畅生, 张哲华. 硅、锗单晶中Ⅳ族代位式杂质产生的局域模与红外吸收[J]. 半导体学报(英文版), 1984, 5(1): 95-98.
      shu

      • Received Date: 2015-08-20

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