Model Library of <em>Φ</em>76mm GaAs Devices

CHEN Xin-yu; CHEN Xiao-jian; HAO Xi-ping; LI Fu-xiao; JIANG You-quan

Chin. J. Semicond. > 2002, Volume 23 > Issue 9 > 983-987

CONTENTS

Model Library of Φ76mm GaAs Devices

CHEN Xin-yu, CHEN Xiao-jian, HAO Xi-ping, LI Fu-xiao and JIANG You-quan

+ Author Affiliations

Abstract:

Based on simulating measured S parameter and DC I-V characteristics, the engineering model of GaAs devices (MESFET, PHEMT) is extracted using microwave on wafer testing technology, and a model library based on Φ76mm GaAs process line is established. These models are confirmed by the design and fabricated of several GaAs MMICs. The results of calculation and those of simulation are in good agreement with each other.

Key words: model, model library, MESFET, PHEMT, Φ76mm GaAs

1	ZnO nanowire network transistors based on a self-assembly method Dai Zhenqing, Chen Changxin, Zhang Yaozhong, Wei Liangming, Zhang Jing, et al. Journal of Semiconductors, 2012, 33(8): 084003. doi: 10.1088/1674-4926/33/8/084003
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3	Characterization of a room temperature terahertz detector based on a GaN/AlGaN HEMT Zhou Yu, Sun Jiandong, Sun Yunfei, Zhang Zhipeng, Lin Wenkui, et al. Journal of Semiconductors, 2011, 32(6): 064005. doi: 10.1088/1674-4926/32/6/064005
4	A Novel Equivalent Circuit Model of GaAs PIN Diodes Wu Rufei, Zhang Haiying, Yin Junjian, Li Xiao, Liu Huidong, et al. Journal of Semiconductors, 2008, 29(4): 672-676.
5	Modeling the Effects of Adhesion Force on the Molecular-Scale Removal Mechanism in the Chemical Mechanical Polishing of Wafer Wang Yongguang, Zhao Yongwu Chinese Journal of Semiconductors , 2007, 28(12): 2018-2022.
6	Models and Related Mechanisms of NBTI Degradation of 90nm pMOSFETs Cao Yanrong, Ma Xiaohua, Hao Yue, Yu Lei, Zhu Zhiwei, et al. Chinese Journal of Semiconductors , 2007, 28(5): 665-669.
7	Planar Split Dual Gate MOSFET:Fabrication,Design,and Layout Xiao Deyuan, Chen Guoqing, Li Ruojia, Lu Pusheng, Chen Liangcheng, et al. Chinese Journal of Semiconductors , 2007, 28(6): 923-930.
8	A New AlGaN/GaN HEMT Semiempirical DC Model Liu Dan, Chen Xiaojuan, Liu Guoguo, He Zhijing, Liu Xinyu, et al. Chinese Journal of Semiconductors , 2006, 27(11): 1984-1988.
9	基于C-V, I-V, Q-V特性的铁电电容新模型 Chinese Journal of Semiconductors , 2005, 26(5): 983-989.
10	亚100nm体硅MOSFET集约I-V模型张大伟, 章浩, 朱广平, 张雪莲, 田立林, et al. Chinese Journal of Semiconductors , 2005, 26(3): 554-561.
11	SOI基双级RESURF二维解析模型 Chinese Journal of Semiconductors , 2005, 26(4): 764-769.
12	A Breakdown Model of Thin Drift Region LDMOS with a Step Doping Profile Li Qi, Zhang Bo, Li Zhaoji Chinese Journal of Semiconductors , 2005, 26(11): 2159-2163.
13	一种单基极引出结构的硅晶体管杨茹, 李国辉, 姬成周, 田晓娜, 韩德俊, et al. Chinese Journal of Semiconductors , 2005, 26(2): 345-348.
14	一种稳定的RLC互连Π模型构建及其应用董刚, 高海霞, 杨银堂, 李跃进 Chinese Journal of Semiconductors , 2005, 26(3): 580-584.
15	优化的基于模型的光学邻近矫正算蔡懿慈, 王旸, 周强, 洪先龙 Chinese Journal of Semiconductors , 2005, 26(3): 601-605.
16	深亚微米功耗优化的简化模型粟雅娟, 魏少军 Chinese Journal of Semiconductors , 2005, 26(3): 595-600.
17	VDMOS场效应晶体管电路模型的构造及参数提取(英文) Chinese Journal of Semiconductors , 2002, 23(3): 251-256.
18	异质结绝缘栅场效应晶体管(HIGFETs)高场区静态特性模型和栅泄漏电流研究 Chinese Journal of Semiconductors , 1990, 11(12): 922-930.
19	凹源结构场效应晶体管 Chinese Journal of Semiconductors , 1985, 6(1): 49-54.
20	一个关于砷化镓场效应晶体管稳态特性的新的分析模型 Chinese Journal of Semiconductors , 1983, 4(5): 510-514.