Chin. J. Semicond. > 2003, Volume 24 > Issue 1 > 18-23
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利用弛豫谱技术对界面陷阱密度和其能量分布的研究(英文)

霍宗亮 , 毛凌锋 , 谭长华 and 许铭真

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Key words: 弛豫谱技术, 界面陷阱, MOS结构

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    Received: 20 August 2015 Revised: Online: Published: 01 January 2003

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      Article Navigation >  Journal of Semiconductors  > 2003  >  24(1): 18-23
      霍宗亮, 毛凌锋, 谭长华, 许铭真. 利用弛豫谱技术对界面陷阱密度和其能量分布的研究(英文)[J]. 半导体学报(英文版), 2003, 24(1): 18-23.
      Citation:
      霍宗亮, 毛凌锋, 谭长华, 许铭真. 利用弛豫谱技术对界面陷阱密度和其能量分布的研究(英文)[J]. 半导体学报(英文版), 2003, 24(1): 18-23.
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      • Received Date: 2015-08-20

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