Chin. J. Semicond. > 2003, Volume 24 > Issue 3 > 318-321
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低开启电压的InGaP/GaAsSb/GaAs双异质结晶体管

郑丽萍 , 严北平 , 孙海锋 , 刘新宇 , 和致经 and 吴德馨

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Key words: 开启电压, GaAsSb, 双异质结晶体管

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    Received: 20 August 2015 Revised: Online: Published: 01 March 2003

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      Article Navigation >  Journal of Semiconductors  > 2003  >  24(3): 318-321
      郑丽萍, 严北平, 孙海锋, 刘新宇, 和致经, 吴德馨. 低开启电压的InGaP/GaAsSb/GaAs双异质结晶体管[J]. 半导体学报(英文版), 2003, 24(3): 318-321.
      Citation:
      郑丽萍, 严北平, 孙海锋, 刘新宇, 和致经, 吴德馨. 低开启电压的InGaP/GaAsSb/GaAs双异质结晶体管[J]. 半导体学报(英文版), 2003, 24(3): 318-321.
      shu

      • Received Date: 2015-08-20

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