Chin. J. Semicond. > 1985, Volume 6 > Issue 1 > 76-81
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瞬态退火注砷硅亚稳态浓度的后热处理特性研究

徐立 , 钱佩信 , 侯东彦 , 林惠旺 , 李志坚 , 王豫生 , 阎建华 and 郑胜男

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    Received: 20 August 2015 Revised: Online: Published: 01 January 1985

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      Article Navigation >  Journal of Semiconductors  > 1985  >  6(1): 76-81
      徐立, 钱佩信, 侯东彦, 林惠旺, 李志坚, 王豫生, 阎建华, 郑胜男. 瞬态退火注砷硅亚稳态浓度的后热处理特性研究[J]. 半导体学报(英文版), 1985, 6(1): 76-81.
      Citation:
      徐立, 钱佩信, 侯东彦, 林惠旺, 李志坚, 王豫生, 阎建华, 郑胜男. 瞬态退火注砷硅亚稳态浓度的后热处理特性研究[J]. 半导体学报(英文版), 1985, 6(1): 76-81.
      shu

      • Received Date: 2015-08-20

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