Chin. J. Semicond. > 2000, Volume 21 > Issue 5 > 445-450
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微波低噪声SiGe HBT的研制

钱伟 , 张进书 , 贾宏勇 , 林惠旺 and 钱佩信

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Key words: HBT, SiGe, 微波, 低噪声

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    Received: 20 August 2015 Revised: Online: Published: 01 May 2000

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      Article Navigation >  Journal of Semiconductors  > 2000  >  21(5): 445-450
      钱伟, 张进书, 贾宏勇, 林惠旺, 钱佩信. 微波低噪声SiGe HBT的研制[J]. 半导体学报(英文版), 2000, 21(5): 445-450.
      Citation:
      钱伟, 张进书, 贾宏勇, 林惠旺, 钱佩信. 微波低噪声SiGe HBT的研制[J]. 半导体学报(英文版), 2000, 21(5): 445-450.
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      • Received Date: 2015-08-20

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