Chin. J. Semicond. > 2005, Volume 26 > Issue 7 > 1401-1405

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Key words: silicon-on-nothing器件自加热效应散热通路空洞层

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    Received: 18 August 2015 Revised: Online: Published: 01 July 2005

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      吴大可, 田豫, 卜伟海, 黄如. 新型SON器件的自加热效应[J]. 半导体学报(英文版), 2005, 26(7): 1401-1405.
      Citation:
      吴大可, 田豫, 卜伟海, 黄如. 新型SON器件的自加热效应[J]. 半导体学报(英文版), 2005, 26(7): 1401-1405.

      • Received Date: 2015-08-18

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