PAPERS
Gong Changmeng, Chen Zhen, Wu Zhou, Chang Guoqiang, Qian Ruiming and Chen Yunfei
Abstract: The figure of merit ZT,maximum temperature difference,and response time are important parameters for thermoelectric coolers.A transient method for testing these parameters is introduced,and the effect of the heat sink is also discussed.The resistance and Seebeck voltages used to calculate the ZT and the maximum temperature difference are measured using a testing system composed of a DC pulse generator and a DAQ card.The transient method is simple and accurate,and can be used to test thin film thermoelectric coolers.In addition,this method spends very little time.Thus,it can shorten the reliability test period for thermoelectric coolers.A 4mm×4mm×2.4mm commercial thermoelectric cooler is tested using this method.A figure of merit ZT of 0.39,maximum temperature difference of 58.5K,and response time of 20s is measured.
Key words: thermoelectric cooler, transient method, resistance voltage, Seebeck voltage
| 1 |
A transient-enhanced NMOS low dropout voltage regulator with parallel feedback compensation Han Wang, Lin Tan Journal of Semiconductors, 2016, 37(2): 025005. doi: 10.1088/1674-4926/37/2/025005 |
| 2 |
A monolithic integrated low-voltage deep brain stimulator with wireless power and data transmission Zhang Zhang, Ye Tan, Jianmin Zeng, Xu Han, Xin Cheng, et al. Journal of Semiconductors, 2016, 37(9): 095003. doi: 10.1088/1674-4926/37/9/095003 |
| 3 |
Devashish Pandey, T.R. Lenka Journal of Semiconductors, 2014, 35(10): 104001. doi: 10.1088/1674-4926/35/10/104001 |
| 4 |
Simulating and modeling the breakdown voltage in a semi-insulating GaAs P+N junction diode A. Resfa, Brahimi.R. Menezla, M. Benchhima Journal of Semiconductors, 2014, 35(8): 084002. doi: 10.1088/1674-4926/35/8/084002 |
| 5 |
Hysteresis analysis of graphene transistor under repeated test and gate voltage stress Jie Yang, Kunpeng Jia, Yajuan Su, Yang Chen, Chao Zhao, et al. Journal of Semiconductors, 2014, 35(9): 094003. doi: 10.1088/1674-4926/35/9/094003 |
| 6 |
Shibir Basak, Pranav Kumar Asthana, Yogesh Goswami, Bahniman Ghosh Journal of Semiconductors, 2014, 35(11): 114001. doi: 10.1088/1674-4926/35/11/114001 |
| 7 |
A voltage regulator system with dynamic bandwidth boosting for passive UHF RFID transponders Jinpeng Shen, Xin'an Wang, Shan Liu, Shoucheng Li, Zhengkun Ruan, et al. Journal of Semiconductors, 2013, 34(10): 105004. doi: 10.1088/1674-4926/34/10/105004 |
| 8 |
Capacitance-voltage analysis of a high-k dielectric on silicon Davinder Rathee, Sandeep K. Arya, Mukesh Kumar Journal of Semiconductors, 2012, 33(2): 022001. doi: 10.1088/1674-4926/33/2/022001 |
| 9 |
MOS Capacitance–Voltage Characteristics from Electron-Trapping at Dopant Donor Impurity Jie Binbin, Sah Chihtang Journal of Semiconductors, 2011, 32(4): 041001. doi: 10.1088/1674-4926/32/4/041001 |
| 10 |
Jie Binbin, Sah Chihtang Journal of Semiconductors, 2011, 32(12): 121001. doi: 10.1088/1674-4926/32/12/121001 |
| 11 |
Silicide-block-film effects on high voltage drain-extended MOS transistors Wang Lei, Gao Chao, Liu Bo, Hu Jian, Lee Po, et al. Journal of Semiconductors, 2009, 30(3): 034003. doi: 10.1088/1674-4926/30/3/034003 |
| 12 |
A novel on-chip high to low voltage power conversion circuit Wang Hui, Wang Songlin, Lai Xinquan, Ye Qiang, Mou Zaixin, et al. Journal of Semiconductors, 2009, 30(3): 035008. doi: 10.1088/1674-4926/30/3/035008 |
| 13 |
A high precision programmable bandgap voltage reference design for high resolution ADC Zhu Tiancheng, Yao Suying, Li Binqiao Journal of Semiconductors, 2009, 30(7): 075005. doi: 10.1088/1674-4926/30/7/075005 |
| 14 |
Capacitance–voltage characterization of fully silicided gated MOS capacitor Wang Baomin, Ru Guoping, Jiang Yulong, Qu Xinping, Li Bingzong, et al. Journal of Semiconductors, 2009, 30(3): 034002. doi: 10.1088/1674-4926/30/3/034002 |
| 15 |
A Simulation of the Capacitance-Voltage Characteristics of a Ge/Si Quantum-Well Structure Cheng Peihong, Huang Shihua Journal of Semiconductors, 2008, 29(1): 110-115. |
| 16 |
Nonlinear Current-Voltage Characteristics and Electroluminescence of cBN Crystal Dou Qingping, Chen Zhanguo, Jia Gang, Ma Haitao, Cao Kun, et al. Chinese Journal of Semiconductors , 2006, 27(4): 609-612. |
| 17 |
Tang Lu, Wang Zhigong, Huang Ting, Li Zhiqun Chinese Journal of Semiconductors , 2006, 27(3): 459-466. |
| 18 |
Low Voltage Flash Memory Cells Using SiGe Quantum Dots for Enhancing F-N Tunneling Deng Ning, Pan Liyang, Liu Zhihong, Zhu Jun, Chen Peiyi, et al. Chinese Journal of Semiconductors , 2006, 27(3): 454-458. |
| 19 |
Yang Wei, Liu Xunchun, Zhu Min, Wang Runmei, Shen Huajun, et al. Chinese Journal of Semiconductors , 2006, 27(5): 765-768. |
| 20 |
Zhang Dawei, Tian Lilin，and Yu Zhiping Chinese Journal of Semiconductors , 2005, 26(3): 429-435. |
Article views: 3415 Times PDF downloads: 2266 Times Cited by: 0 Times
Received: 20 August 2015 Revised: Online: Published: 01 May 2006
| Citation: |
Gong Changmeng, Chen Zhen, Wu Zhou, Chang Guoqiang, Qian Ruiming, Chen Yunfei. A Transient Method for Testing Thermoelectric Coolers[J]. Journal of Semiconductors, 2006, 27(5): 944-947.
****
Gong C M, Chen Z, Wu Z, Chang G Q, Qian R M, Chen Y F. A Transient Method for Testing Thermoelectric Coolers[J]. Chin. J. Semicond., 2006, 27(5): 944.
|
WeChat ID
Journal of Semiconductors © 2017 All Rights Reserved 京ICP备05085259号-2
DownLoad: