| Citation: |
Ma Quanbao, Zhu Liping, Ye Zhizhen, He Haiping, Wang Jingrui, Hu Shaohua, Zhao Binghui. Influence of Sputtering Pressure on the Properties of ZnO：Ga Films Prepared by DC Reactive Magnetron Sputtering[J]. Journal of Semiconductors, 2007, 28(S1): 285-288.
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Ma Q B, Zhu L P, Ye Z Z, He H P, Wang J R, Hu S H, Zhao B H. Influence of Sputtering Pressure on the Properties of ZnO：Ga Films Prepared by DC Reactive Magnetron Sputtering[J]. Chin. J. Semicond., 2007, 28(S1): 285.
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Influence of Sputtering Pressure on the Properties of ZnO：Ga Films Prepared by DC Reactive Magnetron Sputtering
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Abstract
Ga.doped zinc oxide(ZnO：Ga)transparent conductive films with highly (002)-preferred orientations were de. posited on glass substrates bv DC reactive magnetron sputtering.Effects of deposition pressure on the structural，electrical and optical properties of ZnO：Ga films were investigated. The X-ray diffraction (XRD) studies show that the films are highly oriented with their crystaUographic e.axis perpendicular to the substrate almost independent on the deposition pressure.The morphology of the ZnO：Ga films is sensitive to the change of the deposition pressure. The transmittance of the ZnO：Ga thin films is over 90％and the lowest resistivity for ZnO：Ga films is 4.48x 10^-4Ω·cm. -
References
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Proportional views
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