Chin. J. Semicond. > 1996, Volume 17 > Issue 3 > 186-190
|

CONTENTS

应变异质结外延材料的缓冲层厚度与Frank－Read源的关系研究

邹吕凡，王占国，范缇文

+ Author Affiliations

PDF

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2621 Times PDF downloads: 1087 Times Cited by: 0 Times

    History

    Received: 18 August 2015 Revised: Online: Published: 01 March 1996

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 1996  >  17(3): 186-190
      邹吕凡，王占国，范缇文. 应变异质结外延材料的缓冲层厚度与Frank－Read源的关系研究[J]. 半导体学报(英文版), 1996, 17(3): 186-190.
      Citation:
      邹吕凡，王占国，范缇文. 应变异质结外延材料的缓冲层厚度与Frank－Read源的关系研究[J]. 半导体学报(英文版), 1996, 17(3): 186-190.
      shu

      • Received Date: 2015-08-18

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return