Chin. J. Semicond. > 2002, Volume 23 > Issue 5 > 488-491
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激光脉冲沉积法在Si(100)上生长c轴择优取向的LiNbO_3晶体薄膜及其性能

黄靖云 , 叶志镇 , 汪雷 , 叶龙飞 and 赵炳辉

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Key words: 光波导, 铌酸锂薄膜, 激光脉冲沉积法

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    Received: 19 August 2015 Revised: Online: Published: 01 May 2002

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      Article Navigation >  Journal of Semiconductors  > 2002  >  23(5): 488-491
      黄靖云, 叶志镇, 汪雷, 叶龙飞, 赵炳辉. 激光脉冲沉积法在Si(100)上生长c轴择优取向的LiNbO_3晶体薄膜及其性能[J]. 半导体学报(英文版), 2002, 23(5): 488-491.
      Citation:
      黄靖云, 叶志镇, 汪雷, 叶龙飞, 赵炳辉. 激光脉冲沉积法在Si(100)上生长c轴择优取向的LiNbO_3晶体薄膜及其性能[J]. 半导体学报(英文版), 2002, 23(5): 488-491.
      shu

      • Received Date: 2015-08-19

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