Chin. J. Semicond. > 1983, Volume 4 > Issue 4 > 313-320

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半导体表面附近施主原子电离能计算

刘振鹏

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    Received: 20 August 2015 Revised: Online: Published: 01 April 1983

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      Article Navigation >  Journal of Semiconductors  > 1983  >  4(4): 313-320
      刘振鹏. 半导体表面附近施主原子电离能计算[J]. 半导体学报(英文版), 1983, 4(4): 313-320.
      Citation:
      刘振鹏. 半导体表面附近施主原子电离能计算[J]. 半导体学报(英文版), 1983, 4(4): 313-320.
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      • Received Date: 2015-08-20

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