Chin. J. Semicond. > 1997, Volume 18 > Issue 6 > 401--407

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匹配In_(0.53)Ga_(0.47)As/InP量子阱材料的GSMBE生长及特性分析

王晓亮 , 孙殿照 , 孔梅影 , 候洵 and 曾一平

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    Received: 19 August 2015 Revised: Online: Published: 01 June 1997

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      Article Navigation >  Journal of Semiconductors  > 1997  >  18(6): 401--407
      王晓亮, 孙殿照, 孔梅影, 候洵, 曾一平. 匹配In_(0.53)Ga_(0.47)As/InP量子阱材料的GSMBE生长及特性分析[J]. 半导体学报(英文版), 1997, 18(6): 401--407.
      Citation:
      王晓亮, 孙殿照, 孔梅影, 候洵, 曾一平. 匹配In_(0.53)Ga_(0.47)As/InP量子阱材料的GSMBE生长及特性分析[J]. 半导体学报(英文版), 1997, 18(6): 401--407.
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      • Received Date: 2015-08-19

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