| Citation: |
Wang Baozhu, Wang Xiaoliang, Wang Xiaoyan, Wang Xinhua, Guo Lunchun, Xiao Hongling, Wang Cuimei, Ran Junxue, Wang Junxi, Liu Hongxin, Li Jinmin. Effects of Growth Temperature Oil the InAIGaN Epilayer by RF-MBE[J]. Journal of Semiconductors, 2007, 28(S1): 197-199.
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Wang B Z, Wang X L, Wang X Y, Wang X H, Guo L C, Xiao H L, Wang C M, Ran J X, Wang J X, Liu H X, Li J M. Effects of Growth Temperature Oil the InAIGaN Epilayer by RF-MBE[J]. Chin. J. Semicond., 2007, 28(S1): 197.
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Effects of Growth Temperature Oil the InAIGaN Epilayer by RF-MBE
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Abstract
Single crystalline InAIGaN films are grown on sapphire substrate by radio-frequency plasma-excited molecular beam epitaxy (RF-MBE).With the increase of growth temperature，the In content decreases，while the AI and Ga content increase.The InAIOaN grown at high temperature(600℃and 590℃)has some cracks on the surface.The surface of InAl.GaN grown at 580。C is very smoothing.There were SOme hillocks on the surface of InAIGaN film grown at 570℃. -
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