| Citation: |
Zhang Panfeng, Wei Hongyuan, Fan Haibo, Cong Guangwei, Yang Shaoyan, Zhu Qinsheng, Liu Xianglin. Effect of Different Facets of on the Growth of vapor deposition[J]. Journal of Semiconductors, 2007, 28(S1): 289-292.
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Zhang P F, Wei H Y, Fan H B, Cong G W, Yang S Y, Zhu Q S, Liu X L. Effect of Different Facets of on the Growth of vapor deposition[J]. Chin. J. Semicond., 2007, 28(S1): 289.
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Effect of Different Facets of on the Growth of vapor deposition
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Abstract
Zno films were deposited at C-sapphires and r-sapphires using oxygen and methanol as oxidizers。respectively，and were characterized by double crystals X.ray diffraction(DCXRD)，scanning electron microscopy(SEM)and atomic force microscopy(AFM). It is confirmed that the r-sapphire’g surface energy is lower than C-sapphire’S，SO r-sapphire is favorable for adatoms diffusing on the surface and the realization of tow.dimensional growth.It iS found that quality of the films grown by methanol is improved greatly compared with the films grown by oxygen. And it may be the result of the reduction of pre. reaction and the effect of methanol as a surfactant. A surface flat ZnO film was deposited on r-sapphire using methanol as oxidizer，and the full width at half maximum (FWHM) of the(10-12) facet unsymmetrical rocking curve is only 0.10º. -
References
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Proportional views
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