Citation: |
Zhou Jianping, Chai Chunlin, Yang Shaoyan, Liu Zhikai, Song Shulin, Li Yanli, Chen Nuofu, Lin Yuanhua. Effect of Ion Energy and Substrate Temperature on Gadolinium Oxide Structure[J]. Journal of Semiconductors, 2005, 26(S1): 57-60.
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Zhou J P, Chai C L, Yang S Y, Liu Z K, Song S L, Li Y L, Chen N F, Lin Y H. Effect of Ion Energy and Substrate Temperature on Gadolinium Oxide Structure[J]. Chin. J. Semicond., 2005, 26(13): 57.
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Effect of Ion Energy and Substrate Temperature on Gadolinium Oxide Structure
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Abstract
Gadolinium oxide thin films are prepared on silicon (100) substrates with a low-energy dual ion-beam epitaxial technique.Substrate temperature is an important factor to affect the crystal structures and textures in an ion energy range of 100~500eV.The films have a monoclinic Gd2O3 structure with preferred orientation (402) at low substrate temperatures.When the substrate temperature increases,the orientation turnes to (202),and finally,the cubic structure appeares at 700℃,which is disagreed with the previous report because of the ion energy.Oxygen deficiencies are found in the films by XPS studies and part of deficiencies is eliminated after the technical improvement.-
Keywords:
- ion-beam deposition,
- crystal structures,
- XPS
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References
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Proportional views