| Citation: |
Wang Chong, Yue Yuanzheng, Ma Xiaohua, Hao Yue, Feng Qian, Zhang Jincheng. Development and Characteristic Analysis of MOS AlGaN/GaN HEMTs[J]. Journal of Semiconductors, 2008, 29(8): 1557-1560.
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Wang C, Yue Y Z, Ma X H, Hao Y, Feng Q, Zhang J C. Development and Characteristic Analysis of MOS AlGaN/GaN HEMTs[J]. J. Semicond., 2008, 29(8): 1557.
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Development and Characteristic Analysis of MOS AlGaN/GaN HEMTs
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Abstract
The fabrication of MOS high electron mobility transistors on AlGaN/GaN heterostructures grown on sapphire substrates is reported.The gate-length is 1μm and the distance between the source and drain is 4μm.The 4nm SiO2 dielectric is evaporated by electron beam.These devices exhibit a maximum drain current of 718mA/mm at 4V,a maximum transconductance of 172mS/mm,an ft of 8.1GHz,and an fmax of 15.3GHz.The gate leakage current of the MOS HEMT is 2 orders lower than a Schottky gate HEMT.The thin SiO2 dielectric between gate and semiconductor is used to ensure the reduction of gate leakage current and to ensure the transconductance of the devices is not impacted. -
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