Citation: |
Zhao Fengqi, Sarula. Quantum Well Under an External Electric Field[J]. Journal of Semiconductors, 2006, 27(5): 830-833.
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Zhao F Q, Sa R L. Quantum Well Under an External Electric Field[J]. Chin. J. Semicond., 2006, 27(5): 830.
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Quantum Well Under an External Electric Field
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Abstract
The ground state and binding energy of a hydrogenic impurity as functions of the electric field and well width in a GaAs/AlxGa1-xAs PQW are investigated with the variational method.The effects of spatial dependent effective mass and spatial dependent dielectric constant are considered in the calculation.The results indicate that the effects of the external electric field on the ground state and binding energy of the hydrogenic impurity are noticeable,and they increase with increasing well width.The effects of the spatial dependent effective mass and spatial dependent dielectric constant make the ground state energy decrease and the binding energy increase.These effects decrease with increasing well width. -
References
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