Chin. J. Semicond. > 2000, Volume 21 > Issue 5 > 509-516
|

CONTENTS

半导体硅片的p-n结和铜沉积行为的电化学研究

程璇 and 林昌健

+ Author Affiliations

PDF

Key words: 金属污染, 铜沉积, 极化电阻, 硅/溶液界面, p-n结

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2302 Times PDF downloads: 1116 Times Cited by: 0 Times

    History

    Received: 20 August 2015 Revised: Online: Published: 01 May 2000

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 2000  >  21(5): 509-516
      程璇, 林昌健. 半导体硅片的p-n结和铜沉积行为的电化学研究[J]. 半导体学报(英文版), 2000, 21(5): 509-516.
      Citation:
      程璇, 林昌健. 半导体硅片的p-n结和铜沉积行为的电化学研究[J]. 半导体学报(英文版), 2000, 21(5): 509-516.
      shu

      • Received Date: 2015-08-20

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return