| Citation: |
Zhang Xiaoying, Chen Songyan, Lai Hongkai, Li Cheng, Yu Jinzhong. Low-Temperature Wafer-to-Wafer Bonding Using Intermediate Metals[J]. Journal of Semiconductors, 2007, 28(2): 213-216.
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Zhang X Y, Chen S Y, Lai H K, Li C, Yu J Z. Low-Temperature Wafer-to-Wafer Bonding Using Intermediate Metals[J]. Chin. J. Semicond., 2007, 28(2): 213.
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Low-Temperature Wafer-to-Wafer Bonding Using Intermediate Metals
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Abstract
Si/Si bonding has been achieved at low temperatures by introducing Ti/Au layers.The bonding temperature can be reduced to 414℃.The Si/Si bonding strength has been investigated by tensile strength.The results show that the bonding strength exceeds 1.27MPa.I-V tests show that the interface of Si/Ti/Au/Ti/Si is an ohmic contact,and XPS tests indicate that the interface mainly comprises Si-Au eutectic alloy.Different experiments by annealing at gradually changing temperature show that the higher the bonding temperature is,the stronger the bonding energy is.In addition,annealing at gradually changing temperature is propitious to increase bonding strength. -
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