Chin. J. Semicond. > 2002, Volume 23 > Issue 4 > 445-448

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Ge预非晶化硅化物工艺的研究

孙海锋 , 刘新宇 , 海潮和 , 徐秋霞 and 吴德馨

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Key words: SOICMOS器件, 全耗尽, Ge预非晶化硅化物

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    Received: 19 August 2015 Revised: Online: Published: 01 April 2002

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      Article Navigation >  Journal of Semiconductors  > 2002  >  23(4): 445-448
      孙海锋, 刘新宇, 海潮和, 徐秋霞, 吴德馨. Ge预非晶化硅化物工艺的研究[J]. 半导体学报(英文版), 2002, 23(4): 445-448.
      Citation:
      孙海锋, 刘新宇, 海潮和, 徐秋霞, 吴德馨. Ge预非晶化硅化物工艺的研究[J]. 半导体学报(英文版), 2002, 23(4): 445-448.
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      • Received Date: 2015-08-19

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