Chin. J. Semicond. > 1985, Volume 6 > Issue 2 > 185-189
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用CCWT方法确定少子的体产生寿命及表面产生速度

谭长华 and 许铭真

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    Received: 20 August 2015 Revised: Online: Published: 01 February 1985

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      Article Navigation >  Journal of Semiconductors  > 1985  >  6(2): 185-189
      谭长华, 许铭真. 用CCWT方法确定少子的体产生寿命及表面产生速度[J]. 半导体学报(英文版), 1985, 6(2): 185-189.
      Citation:
      谭长华, 许铭真. 用CCWT方法确定少子的体产生寿命及表面产生速度[J]. 半导体学报(英文版), 1985, 6(2): 185-189.
      shu

      • Received Date: 2015-08-20

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