| Citation: |
Han Xiaoyan, Li Guijun, Hou Guofu, Zhang Xiaodan, Zhang Dekun, Chen Xinliang, Wei Changchun, Sun Jian, Xue Junming, Zhang Jianjun, Zhao Ying, Geng Xinhua. Effect of n Doped Layers in an Amorphous Silicon Top Solar Cell on the Performance of "Micromorph" Tandem Solar Cells[J]. Journal of Semiconductors, 2008, 29(8): 1548-1551.
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Han X Y, Li G J, Hou G F, Zhang X D, Zhang D K, Chen X L, Wei C C, Sun J, Xue J M, Zhang J J, Zhao Y, Geng X H. Effect of n Doped Layers in an Amorphous Silicon Top Solar Cell on the Performance of \'Micromorph\' Tandem Solar Cells[J]. J. Semicond., 2008, 29(8): 1548.
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Effect of n Doped Layers in an Amorphous Silicon Top Solar Cell on the Performance of "Micromorph" Tandem Solar Cells
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Abstract
Pin/pin "micromorph" tandem solar cells were deposited by very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD).Tunnel recombination junctions of the "micromorph" tandem solar cells consisting of two microcrystalline-doped layers with a defect rich interface were developed.While the solar cells performed reasonably well under AM 1.5 lights,we found through spectral response measurements that the first deposited cell of the tandem structures was leaking under low light conditions.The insertion of a thin protection layer of n-type amorphous silicon is presented in this paper.The results shown that the introduced n-type amorphous silicon could improve the leakage phenomenon.The leakage phenomenon disappeared when the thickness of the n-type amorphous silicon was 6nm,leading to an increase in open-circuit voltage.The open-circuit voltage increased from 1.27 to 1.33V and FF increased from 60% to 63%. -
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