| Citation: |
Luan Suzhen, Liu Hongxia, Jia Renxu, Wang Jin. A Two-Dimensional Subthreshold Current Model for Dual Material Gate SOI nMOSFETs with Asymmetric Halos[J]. Journal of Semiconductors, 2008, 29(4): 746-750.
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Luan S Z, Liu H X, Jia R X, Wang J. A Two-Dimensional Subthreshold Current Model for Dual Material Gate SOI nMOSFETs with Asymmetric Halos[J]. J. Semicond., 2008, 29(4): 746.
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A Two-Dimensional Subthreshold Current Model for Dual Material Gate SOI nMOSFETs with Asymmetric Halos
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Abstract
A two-dimensional (2D) model for the subthreshold current in a dual-material gate silicon-on-insulator (SOI) MOSFET with a single halo is presented.The model considers a single halo doping in the channel near the source and a dual material gate to derive the channel potential using the explicit solution of the 2D Poisson’s equation.This,together with conventional drift-diffusion theory,results in the development of a subthreshold current model for the novel structure.Model verification is carried out using the 2D device simulator ISE.Good agreement is obtained between the model’s calculations and the simulated results.-
Keywords:
- dual material gate,
- SOI MOSFET,
- subthreshold current,
- 2D modeling
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References
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