Chin. J. Semicond. > 1990, Volume 11 > Issue 12 > 922-930
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异质结绝缘栅场效应晶体管(HIGFETs)高场区静态特性模型和栅泄漏电流研究

顾聪 , 王德宁 and 王渭源

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    Received: 19 August 2015 Revised: Online: Published: 01 December 1990

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      Article Navigation >  Journal of Semiconductors  > 1990  >  11(12): 922-930
      顾聪, 王德宁, 王渭源. 异质结绝缘栅场效应晶体管(HIGFETs)高场区静态特性模型和栅泄漏电流研究[J]. 半导体学报(英文版), 1990, 11(12): 922-930.
      Citation:
      顾聪, 王德宁, 王渭源. 异质结绝缘栅场效应晶体管(HIGFETs)高场区静态特性模型和栅泄漏电流研究[J]. 半导体学报(英文版), 1990, 11(12): 922-930.
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      • Received Date: 2015-08-19

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