Citation: |
林兆军, 张太平, 武国英, 王玮, 阎桂珍, 孙殿照, 张建平, 张国义. Au-GaN肖特基结的伏安特性[J]. 半导体学报(英文版), 2000, 21(4): 369-372.
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Key words: MBE, MOCVD, GaN, 肖特基结, 伏安特性
Article views: 2472 Times PDF downloads: 1492 Times Cited by: 0 Times
Received: 20 August 2015 Revised: Online: Published: 01 April 2000
Citation: |
林兆军, 张太平, 武国英, 王玮, 阎桂珍, 孙殿照, 张建平, 张国义. Au-GaN肖特基结的伏安特性[J]. 半导体学报(英文版), 2000, 21(4): 369-372.
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