Chin. J. Semicond. > 1995, Volume 16 > Issue 3 > 229-234
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用强流金属离子源研究Ti－Si化合物的形成

朱德华，卢红波，柳百新

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    Received: 19 August 2015 Revised: Online: Published: 01 March 1995

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      Article Navigation >  Journal of Semiconductors  > 1995  >  16(3): 229-234
      朱德华，卢红波，柳百新. 用强流金属离子源研究Ti－Si化合物的形成[J]. 半导体学报(英文版), 1995, 16(3): 229-234.
      Citation:
      朱德华，卢红波，柳百新. 用强流金属离子源研究Ti－Si化合物的形成[J]. 半导体学报(英文版), 1995, 16(3): 229-234.
      shu

      • Received Date: 2015-08-19

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