Citation: |
Zhang Jinsong, Xi Hongjia, Wu Yiping, Wu Fengshun. Electromigration of Cu-Ni/Solder/Ni-Cu Structures[J]. Journal of Semiconductors, 2008, 29(1): 174-178.
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Zhang J S, Xi H J, Wu Y P, Wu F S. Electromigration of Cu-Ni/Solder/Ni-Cu Structures[J]. J. Semicond., 2008, 29(1): 174.
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Electromigration of Cu-Ni/Solder/Ni-Cu Structures
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Abstract
We investigated the electromigration mechanisms of Cu-Ni/solder/Ni-Cu structures.An electromigration process was observed when the applied average current density (0.4e4A/cm2) was lower than the threshold value for electromigration (1.0e4A/cm2).This was attributed to the maximum current density (5.83e4A/cm2) being much higher than the threshold value at the cathode area due to effects of current crowding.Because forced-convection heat transfer was introduced,the atoms’ thermal migration maximum was suppressed and did not disturb electromigration in the propagation stage.The electromigration force was dominant in this stage.In the quick-failure stage,atomic motion was driven by the cooperation of thermal migration and electromigration,which was generated by local temperature and the atoms thermal migration increasing rapidly and significantly.-
Keywords:
- SnCu solder,
- Ni-Cu layer,
- electromigration,
- intermetallic compound
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References
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Proportional views