Chin. J. Semicond. > 2000, Volume 21 > Issue 12 > 1193-1197
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全固源分子束外延生长InP和InGaAsP

郝智彪 , 卢京辉 , 任在元 and 罗毅

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Key words: 分子束外延, InP, InGaAsP

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    Received: 20 August 2015 Revised: Online: Published: 01 December 2000

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      Article Navigation >  Journal of Semiconductors  > 2000  >  21(12): 1193-1197
      郝智彪, 卢京辉, 任在元, 罗毅. 全固源分子束外延生长InP和InGaAsP[J]. 半导体学报(英文版), 2000, 21(12): 1193-1197.
      Citation:
      郝智彪, 卢京辉, 任在元, 罗毅. 全固源分子束外延生长InP和InGaAsP[J]. 半导体学报(英文版), 2000, 21(12): 1193-1197.
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      • Received Date: 2015-08-20

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