Chin. J. Semicond. > 1996, Volume 17 > Issue 11 > 858-862
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SiGe／Si异质结构MOS器件栅介质技术研究

亓文杰，於伟峰，李炳宗，顾志光，黄维宁，姜国宝，张翔九

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    Received: 18 August 2015 Revised: Online: Published: 01 November 1996

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      Article Navigation >  Journal of Semiconductors  > 1996  >  17(11): 858-862
      亓文杰，於伟峰，李炳宗，顾志光，黄维宁，姜国宝，张翔九. SiGe／Si异质结构MOS器件栅介质技术研究[J]. 半导体学报(英文版), 1996, 17(11): 858-862.
      Citation:
      亓文杰，於伟峰，李炳宗，顾志光，黄维宁，姜国宝，张翔九. SiGe／Si异质结构MOS器件栅介质技术研究[J]. 半导体学报(英文版), 1996, 17(11): 858-862.
      shu

      • Received Date: 2015-08-18

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