Chin. J. Semicond. > 2000, Volume 21 > Issue 5 > 441-444
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MOCVD与MBE生长GaAs/AlGaAs量子阱材料的红外探测器特性比较

李娜 , 李宁 , 陆卫 , 窦红飞 , 陈张海 , 刘兴权 , 沈学础 , H H Tan , LanFu , C Jagadish , M B Johnston and M Gal

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Key words: GaAs/AlGaAs, 量子阱红外探测器, MOCVD, MBE

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    Received: 20 August 2015 Revised: Online: Published: 01 May 2000

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      Article Navigation >  Journal of Semiconductors  > 2000  >  21(5): 441-444
      李娜, 李宁, 陆卫, 窦红飞, 陈张海, 刘兴权, 沈学础, H H Tan, LanFu, C Jagadish, M B Johnston, M Gal. MOCVD与MBE生长GaAs/AlGaAs量子阱材料的红外探测器特性比较[J]. 半导体学报(英文版), 2000, 21(5): 441-444.
      Citation:
      李娜, 李宁, 陆卫, 窦红飞, 陈张海, 刘兴权, 沈学础, H H Tan, LanFu, C Jagadish, M B Johnston, M Gal. MOCVD与MBE生长GaAs/AlGaAs量子阱材料的红外探测器特性比较[J]. 半导体学报(英文版), 2000, 21(5): 441-444.
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      • Received Date: 2015-08-20

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